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Features
* * * * * * * * * * *
700 MHz to 2700 MHz Operating Frequency Very Low Noise Floor Performance Very Good Sideband and Carrier Suppression Supports Wideband Baseband Input Very High Linearity Very Low LO Leakage 50 Impedance on RF and LO Port Low LO Drive Requirements No External IF Filter Supply Voltage 5 V Small PSSO16 Package
Applications
* * * * *
Infrastructure Digital Communication Systems GSM/TDMA/CDMA2000/W-CDMA/UMTS/ISM Band Transceivers RF Radio Links Wireless Modem Access Points High Performance RF Instrumentation
700 MHz 2700 MHz Direct Quadrature Modulator T0790 Preliminary
Electrostatic sensitive device. Observe precautions for handling.
Description
The T0790 is a direct quadrature modulator using Atmel's Silicon-Germanium (SiGe) process. This modulator features a frequency range of 700 to 2700 MHz with excellent carrier and sideband suppression and a very low noise floor. It operates from a single 5 V supply and provides -11 dBm of power while requiring only 0 dBm input to the integrated LO driver. An RF and an LO amplifier are also included. The T0790 incorporates internal matching on each RF, IF and LO port to enhance ease of use and to reduce the external components required. The LO input can be driven differentially or single ended. Figure 1. Block Diagram
16 1
BBQBBQ+
LO+ LO-
4 5
0 90
13 12
RF+ RF-
BBI+ BBI-
8 9
Rev. 4555D-SIGE-05/04
Pin Configuration
Figure 2. Pinning PSSO16
BBQ+ VCC GND LO+ LOGND /SD BBI+ 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 BBQVCC GND RF+ RFGND VCC BBI-
Pin Description
Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 - Symbol BBQ+ VCC GND LO_IN+ LO_INGND /SD BBI+ BBIVCC GND RF_INRF_IN+ GND VCC BBQPaddle Function Baseband Q-axis positive input Supply voltage Ground Positive local oscillator input, nominal DC voltage is 2.0 V internally biased; input should be AC-coupled Negative local oscillator input, nominal DC voltage is 2.0 V internally biased; input should be AC-coupled Ground Shutdown control Baseband I-axis positive input Baseband I-axis negative input Supply voltage Ground Negative RF output; nominal DC voltage is 2.4 V internally biased; input should be AC-coupled Positive RF output; nominal DC voltage is 2.4 V internally biased; input should be AC-coupled Ground Supply voltage Baseband Q-axis negative input Device ground and heat sink, requires good thermal path; RF reference plane
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Absolute Maximum Ratings
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameters Supply voltage, no RF applied LO input signals Input voltage Operating case temperature Storage temperature Symbols VCC LO_IN-, LO_IN+ BBI+, BBI-, BBQ+, BBQTC TSTG Value 5.5 +10.0 3 -40 to +85 -55 to +150 Unit V dBm V C C
Thermal Resistance
Parameters Junction ambient Symbols RthJA Value 35 Unit K/W
Electrical Characteristics
Test conditions: Unless otherwise noted, the following conditions apply to typical performance specification under static conditions: VCC = 5 V, Tamb = 25C; baseband inputs: 1.9 V DC bias, 200 kHz frequency, 300 mVP-P, 600 mVP-P differential drive, I/Q signals in quadrature, LO = 1960 MHz; PLO = -5 dBm No. 1 1.1 1.2 2 2.1 2.2 2.3 3 3.1 Parameters General Performance Supply voltage Supply current LO Input LO drive LO frequency LO return loss Baseband Inputs Baseband input frequency range Baseband input resistance Baseband input capacitance Miscellaneous Shutdown attenuation Shutdown pin resistance At 1 MHz 7 7 ASD RSD 60 11.9 dB k D D -3 dB bandwidth, baseband inputs, terminated with 50 Per pin Per pin 1, 8, 9, 16 fBB RBB CBB DC 500 MHz D Matched to 50 4, 5 4, 5 4, 5 PLO fLO RLLO -8 700 16 -5 -2 2700 dBm MHz dB D B C 2, 10, 15 2, 10, 15 VCC ICC 4.75 5.0 73 5.25 82 V mA A A Test Conditions Pin Symbol Min. Typ. Max. Unit Type*
3.2 3.3
4
1, 8, 9, 16 1, 8, 9, 16
4.4 4
k pF
D D
4.1 4.2
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
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Electrical Characteristics (Continued)
Test conditions: Unless otherwise noted, the following conditions apply to typical performance specification under static conditions: VCC = 5 V, Tamb = 25C; baseband inputs: 1.9 V DC bias, 200 kHz frequency, 300 mVP-P, 600 mVP-P differential drive, I/Q signals in quadrature, LO = 1960 MHz; PLO = -5 dBm No. 4.3 4.4 4.5 Parameters Shutdown pin capacitance Shutdown input thresholds Test Conditions At 1 MHz Shutdown disabled (normal operation) Shutdown enabled Pin 7 7 7 Symbol CSD 3.75 0 Min. Typ. 5.2 VCC 1.5 Max. Unit pF V V Type* D D D
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
RF Electrical Characteristics (700 to 1000 MHz)
Test conditions: Unless otherwise noted, the following conditions apply to typical performance specification under static conditions: VCC = 5 V, Tamb = 25C; baseband inputs: 1.9 V DC bias, 200 kHz frequency, 300 mVP-P, 600 mVP-P differential drive, I/Q signals in quadrature, LO = 900 MHz; PLO = -5 dBm No. 5 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 5.10 Parameters RF Output Port RF frequency Output power RF return loss 1-dB output compression point LO-RF leakage Sideband suppression IM3 suppression Broadband noise floor Quadrature phase error I/Q amplitude balance Two tone baseband input at 600 mVP-P differential per tone Matched to 50 12, 13 12, 13 12, 13 12, 13 12, 13 12, 13 12, 13 12, 13 12, 13 12, 13 fRF PRFout PLORL P1dB PLORF ASB AIM3 PNOISE -2 -0.2 34 58 3 700 -13.0 -10.5 20 4 -40 40 62 -154 0.5 0.5 -148 +2 +0.2 -34 1000 -9.0 MHz dBm dB dBm dBm dB dB dBm/Hz dB B A D A D D D C B B Test Conditions Pin Symbol Min. Typ. Max. Unit Type*
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
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T0790 [Preliminary]
RF Electrical Characteristics (1700 to 2000 MHz)
Test conditions: Unless otherwise noted, the following conditions apply to typical performance specification under static conditions: VCC = 5 V, Tamb = 25C; baseband inputs: 1.9 V DC bias, 200 kHz frequency, 300 mVP-P, 600 mVP-P differential drive, I/Q signals in quadrature, LO = 1960 MHz; PLO = -5 dBm No. 5 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 5.10 Parameters RF Output Port RF frequency Output power RF return loss 1-dB output compression point LO-RF leakage Sideband suppression IM3 suppression Broadband noise floor Quadrature phase error I/Q amplitude balance Two tone baseband input at 600 mVP-P differential per tone Matched to 50 12, 13 12, 13 12, 13 12, 13 12, 13 12, 13 12, 13 12, 13 12, 13 12, 13 fRF PRFout PLORL P1dB PLORF ASB AIM3 PNOISE -2 -0.2 34 58 2 1700 -15.0 -11.5 16 3 -40 40 62 -155 0.5 0.5 -148 +2 +0.2 -32 2000 -10.0 MHz dBm dB dBm dBm dB dB dBm/Hz dB B A D A D D D C B B Test Conditions Pin Symbol Min. Typ. Max. Unit Type*
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
RF Electrical Characteristics (2300 to 2700 MHz)
Test conditions: Unless otherwise noted, the following conditions apply to typical performance specification under static conditions: VCC = 5 V, Tamb = 25C; baseband inputs: 1.9 V DC bias, 200 kHz frequency, 300 mVP-P, 600 mVP-P differential drive, I/Q signals in quadrature, LO = 2600 MHz; PLO = -5 dBm No. 5 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 5.10 Parameters RF Output Port RF frequency Output power RF return loss 1-dB output compression point LO-RF leakage Sideband suppression IM3 suppression Broadband noise floor Quadrature phase error I/Q amplitude balance Two tone baseband input at 600 mVP-P differential per tone Matched to 50 12, 13 12, 13 12, 13 12, 13 12, 13 12, 13 12, 13 12, 13 12, 13 12, 13 fRF PRFout PLORL P1dB PLORF ASB AIM3 PNOISE -2 -0.2 34 2300 -18 -14.5 15 TBD -40 40 TBD TBD 0.5 0.5 +2 +0.2 -32 2700 -13 MHz dBm dB dBm dBm dB dB dBm/Hz dB B A D A D D D C B B Test Conditions Pin Symbol Min. Typ. Max. Unit Type*
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
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700 MHz to 1000 MHz: Typical Device Performance
Figure 3. SSB Power versus LO Frequency
-5
-7
SSB Power (dBm)
-9
-11
-13
-15 700
750
800
850
900
950
1000
LO Frequency (MHz)
Figure 4. Output P1dB versus LO Frequency
10
8
Output P1dB (dBm)
6
4
2
0 700
750
800
850
900
950
1000
LO Frequency (MHz)
Figure 5. Carrier Feedthrough versus LO Frequency
-30
Carrier Feedthrough (dBm)
-34
-38
-42
-46
-50 700
750
800
850
900
950
1000
LO Frequency (MHz)
6
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T0790 [Preliminary]
Figure 6. Sideband Suppression versus LO Frequency
50
Sideband Suppression (dBm)
46
42
38
34
30 700
750
800
850
900
950
1000
LO Frequency (MHz)
Figure 7. Intermodulation Distortion versus SSB Output Power
0
Output Power (dBm)
-20
Fundamental (each tone)
-40
-60
-80
3rd intermodulation (each tone)
-100 -12 -10 -8 -6 -4 -2 0 2 4 6
BBInput Level (dBVp-p diff.)
Figure 8. RF and LO Return Losses
0
10
Return Loss (dB)
20
LO Port RF Port
30
40 700 750 800 850 900 950 1000
Frequency (MHz)
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1500 MHz to 2500 MHz: Typical Device Performance
All tests have been done on a testboard with LO and RF matching to 2600 MHz (see "Application Bard Schematic" description on page 10). Test in a clima chamber required long cables, which added additionall loss and affected the output power. Figure 9. SSB Power versus LO Frequency
0.0 -2.0 -4.0
SSB Power (dBm)
-6.0 -8.0 -10.0 -12.0 -14.0 -16.0 -18.0 -20.0 1.5 2.0 2.5 3.0
+25C -40C
+85C
LO Frequency (GHz)
Figure 10. Carrier Feedthrough versus LO Frequency
0.0 -10.0
LO Leakage (dBm)
-20.0 -30.0 -40.0 -50.0 -60.0 -70.0 1.5 2.0 2.5 3.0
+25C +85C -40C
LO Frequency (GHz)
Figure 11. Sideband Suppression versus LO Frequency
60.0
Sideband Suppression (dB)
50.0
40.0
-40C
30.0
+25C
+85C
20.0
10.0
0.0 1.5 2.0 2.5 3.0
LO Frequency (GHz)
8
T0790 [Preliminary]
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T0790 [Preliminary]
Figure 12. RF and LO Return Losses
30.0 RF port at +85C 25.0 RF port at +25C LO port at +85C
Return Loss (dB)
20.0
15.0
10.0 LO port at +25C
5.0
RF port at -40C 2.5
LO port at -40C
0.0 2.0 3.0
LO Frequency (GHz)
Figure 13. Phase Error versus LO Frequency
1.4 1.2 1.0
Phase Error (C)
+25C
0.8 0.6 0.4 0.2 0.0 1.5 2.0 2.5 3.0
-40C
+85C
LO Frequency (GHz)
Figure 14. Amplitude Balance versus LO Frequency
0.20 0.18
Amplitude Balance (dB)
0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 1.5 2.0 2.5 3.0
-40C
+25C
+85C
LO Frequency (GHz)
9
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Figure 15. Application Schematic
+5 V
L1
VCC
P1
P2
C2 C3
VCC R1 1 2 3 4 5 6 7 8 D1 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 R2 16 15 14 13 12 11 10 9
VCC C4
LOin P3 C11 8 1
C5 T1 5 4
C6 4 5 T2 1 8 RFout C13 C8
T0790
P4
C12 C15 SH1 R5
R6
R7 VCC
C16
P5
P6
VCC
Bill of Materials (700 MHz to 1000 MHz Evaluation Board)
Component Direct Quadrature Modulator Inductor Resistor Resistor Capacitor Capacitor Electrolytic capacitor Capacitor Capacitor RF transformer 700 MHz to 1300 MHz RF connector Note: Reference D1 L1 R1, R2, R6, R7 R5 C3, C16 C4, C15 C2 C5, C6, C12, C13 C8, C11 T1, T2 P8, P9, P10, P11, P12, P13 Panansonic(R) EHF-FD1618 142-0711-841 Vendor Atmel Wurth Elektronik(R) Part Number/ Remark T0790 74476401 1 H 180 1 k 33 pF 1 nF 10 F 10 pF NC Value(1) Size/Package PSSO16 1210 0402 0402 0402 0402 Size A 0402 0402 3216 SMA
Johnson ComponentsTM 1. May vary due to printed board layout and material.
10
T0790 [Preliminary]
4555D-SIGE-05/04
T0790 [Preliminary]
Bill of Materials (1700 MHz to 2500 MHz Evaluation Board)
Component Direct Quadrature Modulator Inductor Resistor Resistor Capacitor Capacitor Electrolytic capacitor Capacitor Capacitor RF transformer 1200 MHz to 2200 MHz RF connector Note: Reference D1 L1 R1, R2, R6, R7 R5 C3,C16 C4,C15 C2 C5, C6, C12, C13 C8, C11 T1, T2 P8, P9, P10, P11, P12, P13 Panansonic EHF-FD1619 142-0711-841 Vendor Atmel Wurth Elektronik Part Number/ Remark T0790 74476401 1 H 180 1 k 6.8 pF 1 nF 10 F 2.7 pF NC Value(1) Size/Package PSSO16 1210 0402 0402 0402 0402 Size A 0402 0402 3216 SMA
Johnson Components 1. May vary due to printed board layout and material.
Bill of Materials (2500 MHz to 2700 MHz Evaluation Board)
Component Direct Quadrature Modulator Inductor Resistor Resistor Capacitor Capacitor Electrolytic capacitor Capacitor Capacitor Capacitor RF transformer 1200 MHz to 2200 MHz RF connector Note: Reference D1 L1 R1, R2, R6, R7 R5 C3,C16 C4,C15 C2 C5, C12 C6, C13 C8, C11 T1, T2 P8, P9, P10, P11, P12, P13 Panansonic EHF-FD1619 142-0711-841 Vendor Atmel Wurth Elektronik Part Number/ Remark T0790 74476401 1 H 180 1 k 6.8 pF 1 nF 10 F 1.5 pF 1.8 pF NC Value(1) Size/Package PSSO16 1210 0402 0402 0402 0402 Size A 0402 0402 0402 3216 SMA
Johnson Components 1. May vary due to printed board layout and material.
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Figure 16. Demo Test Board (Fully Assembled PCB)
Figure 17. Recommended Package Footprint
1.25
0.30 0.62 0.35 0.62
3.0
3.0
0.25 via
0.7
0.9
6.9 all units are in mm - Indicates metalization - vias connect pad to underlying ground plane
Note:
Only ground signal traces are allowed directly under the package. Heatslug must be soldered to GND. Plugging of the ground vias under the heat slug is also recommended to avoid soldering problems.
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T0790 [Preliminary]
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T0790 [Preliminary]
Ordering Information
Extended Type Number T0790-6C Package PSSO16 Remarks -
Package Information
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4555D-SIGE-05/04

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